jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors B772S transis t or (pnp) features low spe e d switching maximum ratings (t a =25 unless other w is e noted) symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -continuous -3 a p c collector power dissipati on 0.625 w r ? ja thermal resistance, junction to ambient 2 00 /w t j junction temperature 150 t stg storage temperature -55 ~ 150 to-92 1. emitter 2. collec tor 3 base www.cj-elec.com 1 e , aug ,201 7 ordering inform a t ion part nu mb er pack ag e packin g meth od pack quantity
1000pcs/bag
2000pcs/box B772S B772S
equivalent circuit ! "! #"$ %%% & z z=rank of h fe b772 ' #"" ( $ ) !#" 1 b772
www.cj-elec.com e,aug,2017 a t =25 unless otherwise specified parameter symbol test conditions min typ max unit co llecto r -b ase b r eakdown voltage v (br)cbo i c =-100 a ,i e =0 -40 v collector-emitter br ea kdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base b r eakdown voltage v (br)ebo i e = -100 a,i c =0 -6 v collector cut-o ff cu rrent i cbo v cb = -40v , i e =0 -1 a co llecto r cu t-o ff cu rrent i ceo v ce =-30v, i b =0 -10 a emitter cut-off current i ebo v eb =-6 v , i c =0 -1 a dc cu rr en t g a in h fe v ce = -2v, i c = -1a 60 400 collector-emitter satur atio n voltage v ce(sat) i c =-2a, i b = -0.2a -0.5 v base-emitter satur atio n voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v trans ition frequency f t v ce = -5v, i c =-0.1a f = 10mhz 50 80 mhz classification of h fe rank r o y gr range 60-120 100-200 160- 320 200-400
- 0 -300 -600 -900 - 1200 -1 -1 0 -100 -1000 -1 -10 -100 -10 0 0 -100 -1000 -1 -10 -100 -1000 -1 -1 0 - 100 -1000 -1 0 -100 -10 0 0 10 100 1000 -0.1 -1 -10 10 100 -0 -6 -1 2 -18 -0.0 -0.4 -0 .8 -1 .2 -1.6 -2.0 common emitter v ce = -2v v be i c ? ? reverse voltage v be (mv) collector current i c (ma) t a =2 5 t a = 1 0 0 -3000 =10 i c v b esat ?? base-emitter sat urat ion voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 -3000 -2000 t a =100 t a =25 =10 i c v c esat ? ? collector-emitter saturation voltage v cesat (mv) collector currem t i c (m a) -3000 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (m a) com mon emitter v ce = -2v - 3000 f=1m hz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ? ? c ob c ib reverse vo ltage v (v ) capacit ance c (pf) -20 500 com mon em itte r t a =25 - 10ma -9 ma -8 ma -7 ma -6 ma -5 ma -4 ma -3 ma -2 ma i b =-1m a collector current i c (a) collector-em itter voltage v ce (v) static c haracteristic -10 -100 1 10 100 -5 500 collector current i c (ma) transition freq ue ncy f t (mhz) v ce =-5v t a =25 o c i c f t ? ? 0 25 50 75 100 125 150 0 125 250 375 500 625 750 p c ?? t a ambient temperat ure t a ( ) collector po wer dissipat ion p c (mw) www.cj-elec.com 3 e,aug,2017 typical characteristics
min max min max a 3. 300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com ,,201
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 5 e,aug,2017
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